REACTIVE ION ETCHING OF POLYSILICON AND TANTALUM SILICIDEBEINVOGL W; HASLER B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 125-130; BIBL. 26 REF.Article

HIGH RATE ALUMINIUM ETCHING IN A BATCH LOADED REACTIVE ION ETCHERSAIA RJ; GOROWITZ B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 247-251Article

Defect-free reactive ion etching of silicon by SiF₄/Cl₂ plasmaMATSUMOTO, H; SUGANO, T.Japanese journal of applied physics. 1983, Vol 22, Num 6, pp 963-967, issn 0021-4922Article

Reactive ion beam etching of MoSi₂ in CCl₄POWELL, R. A.Journal of the Electrochemical Society. 1983, Vol 130, Num 5, pp 1164-1167, issn 0013-4651Article

Ion beam etching of InP. II: Reactive etching with halogen-based sources gasesYUBA, Y; GAMO, K; XI GUAN HE et al.Japanese journal of applied physics. 1983, Vol 22, Num 7, pp 1211-1214, issn 0021-4922Article

Reactive ion etching of copper filmsSCHWARTZ, G. C; SCHAIBLE, P. M.Journal of the Electrochemical Society. 1983, Vol 130, Num 8, pp 1777-1779, issn 0013-4651Article

Post-processing gap reduction in a micromachined resonator for vacuum pressure easurementBILLEP, Detlef; HILLER, Karla; FRÖMEL, Jorg et al.SPIE proceedings series. 2005, pp 341-350, isbn 0-8194-5831-7, 1Vol, 10 p.Conference Paper

A three-layer resist system for deep U.V. and RIE microlithography on nonplanar surfacesBASSOUS, E; EPHRATH, L. M; PEPPER, G et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 478-484, issn 0013-4651Article

Reactive ion etching (RIE) techniques for micromachining applicationsLI, Y. X; WOLFFENBUTTEL, M. R; FRENCH, P. J et al.Sensors and actuators. A, Physical. 1994, Vol 41, Num 1-3, pp 317-323, issn 0924-4247Conference Paper

Sidewall tapering in reactive ion etchingNAGY, A. G.Journal of the Electrochemical Society. 1985, Vol 132, Num 3, pp 689-693, issn 0013-4651Article

NON CONTACT SURFACE TEMPERATURE MEASUREMENT DURING REACTIVE-ION ETCHING USING FLUORESCENT POLYMER FILMSKOLODNER P; KATZIR A; HARTSOUGH N et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 749-751; BIBL. 6 REF.Article

MIKORSTRUKTURIERUNG VON FOTOSCHABLONEN MITTELS NICHTREAKTIVER HOCHFREQUENZIONENAETZUGN = MICROSTRUCTURATION DE MODELES PHOTO OU MILIEU DE CIRCUITS DE HAUTE FREQUENCE NON REACTIFSSPANGENBERG B; GORANCHEV BG; ORLINOV VI et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 4; PP. 313-322; ABS. ENG; BIBL. 10 REF.Article

A linearly tunable capacitor fabricated by the post-CMOS processDAI, Ching-Liang; LIU, Mao-Chen; LI, Yu-Ren et al.SPIE proceedings series. 2005, pp 642-648, isbn 0-8194-5831-7, 1Vol, 7 p.Conference Paper

Fabrication of deep submicron patterns with high aspect ratio using magnetron reactive ion etching and sidewall processGAO SHIPING; CHEN MENGZHEN.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2708-2710, issn 1071-1023Conference Paper

High temperature operated enhancement-type β-SiC MOSFETFUMA, H; MIURA, A; TADANO, H et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2143-L2145, issn 0021-4922, part 2Article

Si surface study after Ar ion-assisted Cl₂ etchingTAKASAKI, N. A; IKAWA, E; KUROGI, Y et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 4, pp 806-811, issn 0734-211XArticle

Reactive ion etching of quartz and glasses for microfabricationLEECH, P. W; REEVES, G. K.SPIE proceedings series. 1999, pp 839-847, isbn 0-8194-3154-0, 2VolConference Paper

Near surface contamination of silicon during reactive ion beam etching with chlorineCHARVAT, P. K; KRUEGER, E. E; RUOFF, A. L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 4, pp 812-817, issn 0734-211XArticle

High contrast x-ray mask preparationONO, T; OZAWA, A.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1984, Vol 2, Num 1, pp 68-72Article

Reactive ion etching damage to GaAs layers with etch stopsKNOEDLER, C. M; OSTERLING, L; SHTRIKMAN, H et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1573-1576, issn 0734-211XArticle

WSi₂/Si Multilayer Sectioning by Reactive Ion Etching for Multilayer Laue Lens FabricationBOUET, N; CONLEY, R; BIANCAROSA, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7802, issn 0277-786X, isbn 978-0-8194-8298-3, 780203.1-780203.5Conference Paper

Reactive ion etching of diamondSANDHU, G. S; CHU, W. K.Applied physics letters. 1989, Vol 55, Num 5, pp 437-438, issn 0003-6951, 2 p.Article

Angular dependence of etching yield of single crystal Si in Cl₂ reactive ion beam etchingKRUEGER, E. E; RUOFF, A. L.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1985, Vol 3, Num 6, pp 1650-1651, issn 0734-211XArticle

Mechanism of dry etching of silicon dioxide: a case of direct reactive ion etchingSTEINBRÜCHEL, C; LEHMANN, H. W; FRICK, K et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 1, pp 180-185, issn 0013-4651Article

RIE OF SIO₂ IN DOPED AND UNDOPED FLUOROCARBON PLASMASNORSTROEM H; BUCHTA R; RUNOVC F et al.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 12; PP. 737-745; BIBL. 29 REF.Article